triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information june 4, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 26 28 30 32 34 36 38 32 33 34 35 36 37 38 frequency (ghz) psat (dbm) -25 -20 -15 -10 -5 0 5 10 15 20 25 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) s-parameter (db) ka-band power amplifier TGA4517-EPU key features ? frequency range: 31 - 37 ghz ? 35 dbm nominal psat ? 15 db nominal gain ? 12 db nominal return loss ? bias 5-6 v, 2 a quiescent ? 0.15 um 3mi phemt technology ? chip dimensions 4.35 x 3.90 x 0.05 mm (0.171 x 0.154 x 0.002) in primary applications ? point-to-point radio ? military radar systems ? ka-band sat-com preliminary measured data bias conditions: vd = 6 v, idq = 2 a gain orl irl bias conditions: vd = 6 v, idq = 2 a, duty = 20% @ pin = 24 dbm
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information june 4, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice table i absolute maximum ratings 1/ symbol parameter value notes vd drain voltage 8 v 2/ vg gate voltage range -3 to 0 v id drain current (under rf drive) 4 a 2/ 3 / ? ig ? gate current 141 ma 3/ p in input continuous wave power tbd p d power dissipation 18.3 w 2/ 4 / t ch operating channel temperature 150 0 c5/ 6 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ total current for the entire mmic. 4/ when operated at this bias condition (with rf applied) at a base plate temperature of 70 0 c, the median life is 1e+6 hrs. 5/ junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ these ratings apply to each individual fet. TGA4517-EPU table ii dc probe tests (ta = 25 0 c, nominal) symbol parameter min. typ. max. units v bvgd,q1-q2 breakdown voltage gate-drain -30 -14 -11 v v bvgd,q15-q30 breakdown voltage gate-drain -30 -14 -11 v v p,q15-q30 pinch-off voltage -1.5 -1 -0.5 v each fet cell is 750um
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information june 4, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice parameter typical units frequency range 31 - 37 ghz drain voltage, vd 6 v drain current (quiescent), idq 2 a gate voltage, vg -0.5 v small signal gain, s21 15 db input return loss, s11 14 db output return loss, s22 12 db output power, psat 35 dbm table iii electrical characteristics (ta = 25 0 c, nominal) TGA4517-EPU table iv thermal information parameter test conditions t ch ( o c) r t jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to backside of carrier) vd = 6 v idq = 2 a pdiss = 12 w 122.3 4.36 1.2e+7 note : assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature and with rf applied.
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information june 4, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 0 2 4 6 8 10 12 14 16 18 20 22 24 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) gain (db) vd=5v vd=6v TGA4517-EPU preliminary measured data bias conditions: vd =5-6 v, idq = 2 a, room temp. bias conditions: vd =5-6 v, idq = 2 a, duty = 20%, room temp. 26 27 28 29 30 31 32 33 34 35 36 37 38 32 33 34 35 36 37 38 frequency (ghz) psat (dbm) vd=5v vd=6v
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information june 4, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA4517-EPU preliminary measured data bias conditions: vd =5-6 v, idq = 2 a, room temp. -25 -20 -15 -10 -5 0 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) input return loss (db) vd=5v vd=6v -25 -20 -15 -10 -5 0 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) output return loss (db) vd=5v vd=6v
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information june 4, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 22 24 26 28 30 32 34 36 38 7 8 9 101112131415161718192021222324 input power (dbm) output power (dbm) 0 1 2 3 4 5 6 7 8 drain current (a) vd=5v vd=6v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 32 33 34 35 36 37 38 frequency (ghz) id (a) vd=5v vd=6v TGA4517-EPU preliminary measured data drain current vs. drain voltage, duty = 20%, room temp. pin = 24 dbm frequency = 35 ghz
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information june 4, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA4517-EPU preliminary measured data bias conditions: vd =5-6 v, idq = 2 a, cw power @ pin = 22dbm, room temp. 28 29 30 31 32 33 34 35 36 37 38 32 33 34 35 36 37 38 frequency (ghz) psat (dbm) vd=5v vd=6v
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information june 4, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice units: millimeters (inches) thickness: 0.050 (0.002) (reference only) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) rf ground is backside of mmic 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0 0 0.606 (0.024) 0.873 (0.034) 1.188 (0.047) 1.735 (0.068) 1.934 (0.076) 2.134 (0.084) 2.860 (0.113) 3.821 (0.150) 4.352 (0.171) (1.950 (0.077) 4.226 (0.166) 0.005 (0.125) 3.900 (0.154) 1.951 (0.077) (0.034) 0.873 0.606 (0.024) (0.047) 1.188 (0.068) 1.735 (0.076) 1.934 (0.113) 2.860 (0.084) 2.134 (0.150) 3.821 bond pad # 1: bond pad # 2, 18: bond pad # 3, 17: bond pad # 4, 16: bond pad # 5, 15: bond pad # 6, 14: bond pad # 7, 13: bond pad # 8, 12: bond pad # 9, 11: bond pad # 10: (rf in) (vg1) (vd1) (vg2) (vd2) (vg3) (vg4) (vd3) (vd4) (rf out) 0.125 x 0.200 (0.005 x 0.008) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.200 (0.005 x 0.008) mechanical drawing TGA4517-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information june 4, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice chip assembly diagram TGA4517-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. . rf in rf out vd vg 100 ohm 10uf 0.01uf 0.01uf 0.01uf 0.01uf 0.01uf 0.01uf 1000pf 1000pf 1000pf 1000pf 1000pf 1000pf 1000pf vd
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information june 4, 2004 10 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4517-EPU reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 0 c (30 seconds max). an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. maximum stage temperature is 200 0 c.
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